CSD18510KTT Datasheet - Texas Instruments

CSD18510KTT power MOSFET

This 40-V, 1.4-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. . Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Sou.

CSD18510KTT Features

* 1 Ultra-Low Qg and Qgd

* Low-Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* D2PAK Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Motor Control 3 Desc

CSD18510KTT Datasheet (399.15 KB)