CSD18536KTT Datasheet - Texas Instruments

CSD18536KTT N-Channel MOSFET

This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drai.

CSD18536KTT Features

* 1 Ultralow Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Pb-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* D2PAK Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Motor Control 3 Descr

CSD18536KTT Datasheet (948.25 KB)