CSD19532KTT Datasheet - Texas Instruments

CSD19532KTT 100V N-Channel Power MOSFET

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on).

CSD19532KTT Features

* 1 Ultra-Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Pb-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* D2PAK Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Hot Swap

* Mot

CSD19532KTT Datasheet (367.12 KB)