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CSD86311W1723 Dual N-Channel Power MOSFET

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Description

CSD86311W1723 www.ti.com Dual N-Channel NexFET™ Power MOSFET Check for Samples: CSD86311W1723 SLPS251 * MAY 2010 .
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an u.

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Features

* 1
* Dual N-Ch MOSFETs
* Common Source Configuration
* Small Footprint 1.7 mm × 2.3 mm
* Ultra Low Qg and Qgd
* Pb Free
* RoHS Compliant

Applications

* Battery Management
* Battery Protection
* DC-DC Converters PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 3.1 nC Qgd Gate Charge Gate to Drain 0.33 nC VGS = 2.5V 37 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 31 mΩ VGS

CSD86311W1723 Distributors

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Dual N-Channel Power MOSFET Texas Instruments
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