CSD87312Q3E Datasheet - Texas Instruments

CSD87312Q3E, Dual 30-V N-Channel Power MOSFET

CSD87312Q3E www.ti.com SLPS333 * NOVEMBER 2012 Dual 30-V N-Channel NexFET™ Power MOSFETs .
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection.

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Datasheet Details

Part number:

CSD87312Q3E

Manufacturer:

Texas Instruments ↗

File Size:

374.13 KB

Description:

Dual 30-V N-Channel Power MOSFET

Features

* 1
* Common Source Conn ection
* UltrZaZZLWLoFRwP Drain to Drain On-Resistance
* Space Saving SON 3.3 x 3.3mm Plastic Package
* Optimized for 5V Gate Drive
* Lowx Thermal Resistance
* Avaxlanche Rated
* PbxxFree Terminal Plating

Applications

* TEXT ADDED FOR SPACING Top View Top View D1 D2 D1 D2 S D1 D2 D1 G TEXT ADDEDy FOR SPACING Circuit Image . PRODUCT SUMMARY TA = 25°C TYPICAL VALUE VDS Drain to Sour6c/e3V6oltagದe6(37(0%(5 30 Qg Gate Charge

CSD87312Q3E Distributors

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CSD87312Q3E Dual 30-V N-Channel Power MOSFET Texas Instruments

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