LMG1210 - half-bridge MOSFET and GaN FET driver

Product Overview

Texas Instruments

Datasheet Details

Part number	LMG1210
Manufacturer	Texas Instruments
File Size	1.61 MB
Description	half-bridge MOSFET and GaN FET driver
Datasheet	LMG1210 Datasheet
Additional preview pages of the LMG1210 datasheet.

Product details

Description

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that

Features

1 Up to 50-MHz operation.
10-ns typical propagation delay.
3.4-ns high-side to low-side matching.
Minimum pulse width of 4 ns.
Two control input options.
Single PWM input with adjustable dead time.
Independent input mode.
1.5-A peak source and 3-A peak sink currents.
External bootstrap diode for flexibility.
Internal LDO for adaptability to voltage rails.
High 300-V/ns CMTI.
HO to LO capac.

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Published: Oct 26, 2024 |