LMG1210 half-bridge MOSFET and GaN FET driver

Texas Instruments

Description

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG1210 SNOSD12D * NOVEMBER 2018 * REVISED JANU.
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficie.

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Datasheet Specifications

Part number: LMG1210
Manufacturer: Texas Instruments ↗
File Size: 1.61 MB
Datasheet: LMG1210-etcTI.pdf
Description: half-bridge MOSFET and GaN FET driver

Features

* 1 Up to 50-MHz operation
* 10-ns typical propagation delay
* 3.4-ns high-side to low-side matching
* Minimum pulse width of 4 ns
* Two control input options
* Single PWM input with adjustable dead time
* Independent input mode
* 1.5-A

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LMG1210 half-bridge MOSFET and GaN FET driver Texas Instruments

Texas Instruments LMG1210-like datasheet