SN6432
1.27MB
Quadruple 2-input positive-or gates.
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SN64BCT125A - Quadruple Bus Buffer Gate
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• High-Impedance State During Power-Up
and Power-Down
• 3-State Outputs Drive Bus Lines or.
SN64BCT126A - QUADRUPLE BUS BUFFER GATE
(Texas Instruments)
D State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
D 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
D ESD Protection Exce.
SN64BCT2240 - Octal Buffer and LINE/MOS Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V
Using Machine.
SN64BCT2241 - Octal Buffer and LINE/MOS Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V
Using Machine.
SN64BCT2244 - Octal Buffer and LINE/MOS Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V
Using Machine.
SN64BCT240 - Octal Buffer/Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• ESD Protection Exce.
SN64BCT241 - Octal Buffer/Driver
(Texas Instruments)
D State-of-the-Art BiCMOS Design
Substantially Reduces Standby Current
D 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
D ESD Prot.
SN64BCT244 - Octal Buffer/Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• P-N-P Inputs Reduce.
SN64BCT245 - Octal Bus Transceiver
(Texas Instruments)
SN64BCT245 OCTAL BUS TRANSCEIVER
WITH 3ĆSTATE OUTPUTS
SCBS040A − JANUARY 1990 − REVISED JANUARY 1994
• BiCMOS Design Significantly Reduces ICCZ • 3-S.
SN64BCT25244 - 25-Ohm Octal Buffer/Driver
(Texas Instruments)
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• High-Impedance State During Power Up and
Power Down
• ESD Protection Exceeds 2000 V Per
.