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TMS28F200BZT BOOT-BLOCK FLASH MEMORIES

TMS28F200BZT Description

D Organization ...262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture * Two 8K-Byte Parameter Blocks * One 96K-Byte .
The TMS28F200BZx is a 262 144 by 8-bit / 131 072 by 16-bit (2 097 152-bit), boot-block flash memory that can be electrically block-erased and reprogr.

TMS28F200BZT Features

* user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and
* 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = 0°C to 70°C E =
* 40°C to 85°C P

TMS28F200BZT Applications

* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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Texas Instruments TMS28F200BZT-like datasheet