TMS28F200BZT Datasheet - Texas Instruments

TMS28F200BZT BOOT-BLOCK FLASH MEMORIES

The TMS28F200BZx is a 262 144 by 8-bit / 131 072 by 16-bit (2 097 152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-.

D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture Two 8K-Byte Parameter Blocks One 96K-Byte Main Block One 128K-Byte Main Block One 16K-Byte Protected Boot Block Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program .

TMS28F200BZT Features

* user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and

* 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = 0°C to 70°C E =

* 40°C to 85°C P

TMS28F200BZT Datasheet (391.09 KB)