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TMS417800A DYNAMIC RANDOM-ACCESS MEMORIES

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Description

This data sheet is applicable to all TMS417800As symbolized by Revision “E” and subsequent revisions as described in the device symbolization secti.
The TMS417800A is a 16 777 216-bit dynamic random-access memory (DRAM) device organized as 2 097 152 words of eight bits.

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Features

* maximum RAS access times of 50-, 60-, and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS417800A is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). This package is designed fo

Applications

* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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