* maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou
TMS428169A Datasheet (422.65 KB)
TMS428169A
422.65 KB
Dynamic random-access memories.
This data sheet is applicable to TMS418169A
and TMS428169A symbolized by Revision “E”,
and subsequent revisions as described in the
device symboliz.
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