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TMS428169A, TMS418169A DYNAMIC RANDOM-ACCESS MEMORIES

TMS428169A Description

This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision “E”, and subsequent revisions as described in the device symboliz.
PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A[0:9.

TMS428169A Features

* maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou

TMS428169A Applications

* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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This datasheet PDF includes multiple part numbers: TMS428169A, TMS418169A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
TMS428169A, TMS418169A
Manufacturer
Texas Instruments ↗
File Size
422.65 KB
Datasheet
TMS418169A-etcTI.pdf
Description
DYNAMIC RANDOM-ACCESS MEMORIES
Note
This datasheet PDF includes multiple part numbers: TMS428169A, TMS418169A.
Please refer to the document for exact specifications by model.

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DYNAMIC RANDOM-ACCESS MEMORIES Texas Instruments
Texas Instruments TMS428169A-like datasheet