TPIC1301 Datasheet (Texas Instruments) - 3-Half H-Bridge Gate-Protected Power DMOS Array

TPIC1301, 3-Half H-Bridge Gate-Protected Power DMOS Array

GND 5 GND 6 20 DRAIN2 19 DRAIN2 The TPIC1301 is a monolithic gate-protected GATE5 7 18 OUTPUT2 power DMOS array that consists of six electrically SOURCE6 8 17 OUTPUT2 isolated N-channel enhancement-mode DMOS SOURCE6 9 16 GATE2 transistors configured as three half H-bridges.

GATE6 10 15

TPIC1301 Features

* integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition OUTPUT3 11 OUTPUT3 12 14 DRAIN3 13 GATE3 occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in se