iMN009N04G

N-Channel Enhancement Mode MOSFET

iMN009N04G Features

*  Advanced trench cell design  Low Thermal Resistance 1.2 Applications  Motor drivers 1.3 Quick reference  BV ≧ 40 V  Ptot ≦ 150 W  ID ≦ 297 A 2. Pin Description Pin Description 1,2,3 4 5,6,7,8 Source Gate Drain  DC - DC Converter  RDS(ON) ≦ 1.0 mΩ @ VGS = 10 V RDS(ON) ≦ 3.1 mΩ @ VG

iMN009N04G General Description

Pin Description 1,2,3 4 5,6,7,8 Source Gate Drain  DC - DC Converter  RDS(ON) ≦ 1.0 mΩ @ VGS = 10 V RDS(ON) ≦ 3.1 mΩ @ VGS = 6 V Simplified Outline 8 76 5 Symbol D 1 2 34 Top View PDFN5x6-8L G S 1 Version 1.0 iMN009N04G 3. Limiting Values Symbol Parameter Conditions VDS VGS ID
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iMN009N04G Datasheet (847.95 KB)

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iMN009N04G

Manufacturer:

inergy

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847.95 KB

Description:

N-channel enhancement mode mosfet.

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iMN009N04G N-Channel Enhancement Mode MOSFET inergy

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iMN009N04G Features

iMN009N04G General Description

Datasheet Details

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