ISL71040M Radiation Tolerant Low-Side GaN FET Driver

intersil

Description

ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride.
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Datasheet Specifications

Part number: ISL71040M
Manufacturer: intersil
File Size: 783.17 KB
Datasheet: ISL71040M-intersil.pdf
Description: Radiation Tolerant Low-Side GaN FET Driver

Features

* an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be

Applications

* ▪ Flyback and forward converters ▪ Boost and PFC converters ▪ Secondary synchronous FET drivers 4.8 4.7 4.6 4.5 4.4 4.3 -55°C 125°C 25°C 4.2 4 5 6 7 8 9 10 11 12 13 14 VDD (V) Figure 2. VDRV Line Regulation vs Temperature R34DS0001EU0102 Rev.1.02 Oct 3, 2024 Page 1 © 2019-2024 Renesas

ISL71040M Distributors

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ISL71040M Radiation Tolerant Low-Side GaN FET Driver intersil

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