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ISL71040M Radiation Tolerant Low-Side GaN FET Driver

ISL71040M Description

ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride.
3 3.

ISL71040M Features

* an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be

ISL71040M Applications

* ▪ Flyback and forward converters ▪ Boost and PFC converters ▪ Secondary synchronous FET drivers 4.8 4.7 4.6 4.5 4.4 4.3 -55°C 125°C 25°C 4.2 4 5 6 7 8 9 10 11 12 13 14 VDD (V) Figure 2. VDRV Line Regulation vs Temperature R34DS0001EU0102 Rev.1.02 Oct 3, 2024 Page 1 © 2019-2024 Renesas

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Datasheet Details

Part number
ISL71040M
Manufacturer
intersil
File Size
783.17 KB
Datasheet
ISL71040M-intersil.pdf
Description
Radiation Tolerant Low-Side GaN FET Driver

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Radiation Tolerant Low-Side GaN FET Driver intersil
intersil ISL71040M-like datasheet