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3 3.
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5 3.1 A
ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations.
The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.
The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an i
ISL71040M Features
* an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be
Datasheet Details
ISL71040M
intersil
783.17 KB
Radiation tolerant low-side gan fet driver.
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