LN4703 Datasheet (natlinear) - P-Channel Enhancement Mode Field Effect Transistor

LN4703, P-Channel Enhancement Mode Field Effect Transistor

The LN4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Standard Product LN4703 is Pb-free (meets ROHS & Sony 259 specification

LN4703 Features

* VDS(V) = -20V

* ID = -3.4A (VGS = -4.5V)

* RDS(ON) < 90mΩ (VGS = -4.5V)

* RDS(ON) < 120mΩ (VGS = -2.5V)

* RDS(ON) < 160mΩ (VGS = -1.8V)

* Schottky：VKA (V) = 20V, IF = 1A, VF