NP4886BD6 40V Dual N-Channel Enhancement Mode MOSFET

Description

NP4886BD6 40V Dual N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NP4886BD6
Manufacturer: natlinear
File Size: 824.89 KB
Datasheet: NP4886BD6-natlinear.pdf
Description: 40V Dual N-Channel Enhancement Mode MOSFET

Features

* VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Marking and pin assignment Applicati

NP4886BD6 Distributors

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NP4886BD6 40V Dual N-Channel Enhancement Mode MOSFET natlinear

natlinear NP4886BD6-like datasheet