BAV170M
description
Dual mon cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- High switching speed: trr = 0.8 µs
- Low leakage current: IR = 3 p A
- Repetitive peak reverse voltage VRRM ≤ 85 V
- Low capacitance Cd = 2 p F
- Ultra small SMD plastic package
- Low package height of 0.48 mm
- AEC-Q101 qualified
3. Applications
- Low-leakage current applications
- General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage trr reverse recovery time
Conditions
Tamb = 25 °C; single diode loaded
[1]
VR = 75 V; Tj = 25 °C
Tj = 25 °C
IF = 10 m A; IR = 10 m A; IR(meas) = 1 m A; RL = 100 Ω; Tamb = 25 °C
Min Typ Max
- - 320
- 0.003 5
- - 75
- 0.8 3
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit m A n A V...
