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BUK661R8-30C - N-channel MOSFET

BUK661R8-30C Description

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev.2.1 * 18 August 2011 Product data sheet 1.Product profile 1.1 General descr.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK661R8-30C Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

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