Datasheet4U Logo Datasheet4U.com

BUK6Q66-60P - 60V P-channel Trench MOSFET

BUK6Q66-60P Description

BUK6Q66-60P 60 V, P-channel Trench MOSFET 15 May 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET tec.

BUK6Q66-60P Features

* Logic-level compatible
* Trench MOSFET technology
* Side-wettable flanks for optical solder inspection
* Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

BUK6Q66-60P Applications

* Reverse polarity protection
* High-speed line driver
* High-side load switch
* Relay driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipat

📥 Download Datasheet

Preview of BUK6Q66-60P PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)

📌 All Tags

60V P-channel Trench MOSFET nexperia
nexperia BUK6Q66-60P-like datasheet