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BUK6Q8R2-30P - 30V P-channel Trench MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Trench MOSFET technology.
  • Side-wettable flanks for optical solder inspection.
  • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint).
  • AEC-Q101 qualified 3.

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Datasheet preview – BUK6Q8R2-30P

Datasheet Details

Part number BUK6Q8R2-30P
Manufacturer nexperia
File Size 330.17 KB
Description 30V P-channel Trench MOSFET
Datasheet download datasheet BUK6Q8R2-30P Datasheet
Additional preview pages of the BUK6Q8R2-30P datasheet.

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Full PDF Text Transcription

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BUK6Q8R2-30P 30 V, P-channel Trench MOSFET 2 June 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Side-wettable flanks for optical solder inspection • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) • AEC-Q101 qualified 3. Applications • Reverse polarity protection • High-speed line driver • High-side load switch • Relay driver 4. Quick reference data Table 1.
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