• Part: NGD4300-Q100
  • Description: 4A peak high-performance dual MOSFET gate driver
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 2.44 MB
Download NGD4300-Q100 Datasheet PDF
Nexperia
NGD4300-Q100
description 2. Features and benefits The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both lowside and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals plying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the lowside and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths....