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NSF080120L4A0 N-channel SiC MOSFET

NSF080120L4A0 Description

NSF080120L4A0 1200 V, 80 mΩ, N-channel SiC MOSFET 2 February 2024 Product data sheet 1.General .
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting tech.

NSF080120L4A0 Features

* Excellent RDSon temperature stability
* Very low switching losses
* Fast reverse recovery
* Fast switching speed
* Temperature independent turn-off switching losses
* Very fast and robust intrinsic body diode
* Faster commutation and improved

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