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PDTD123YT-Q 500mA NPN resistor-equipped transistor

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Description

PDTD123YT-Q 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ 22 July 2022 Product data sheet 1.General .
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

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Features

* Built-in bias resistors
* Simplifies circuit design
* 500 mA output current capability
* Reduces component count
* Reduces pick and place costs
* ± 10 % resistor ratio tolerance
* Qualified according to AEC-Q101 and recommended for use in aut

Applications

* 3. Applications
* Digital application in automotive and industrial segment
* Controlling IC inputs
* Cost-saving alternative to BC817-Q series in digital applications
* Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO

PDTD123YT-Q Distributors

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