PMN280ENEA N-channel MOSFET

nexperia

Description

PMN280ENEA 100 V, N-channel Trench MOSFET 11 April 2019 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET tec.

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Datasheet Specifications

Part number: PMN280ENEA
Manufacturer: nexperia ↗
File Size: 260.08 KB
Datasheet: PMN280ENEA-nexperia.pdf
Description: N-channel MOSFET

Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

PMN280ENEA Distributors

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PMN280ENEA N-channel MOSFET nexperia

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