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PMN30XPE P-channel MOSFET

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Description

PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET tec.

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Features

* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 12

PMN30XPE Distributors

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P-channel MOSFET nexperia
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