PMPB06R3XN 30V N-channel Trench MOSFET

nexperia

Description

202D0FM-N6 PMPB06R3XN 30 V, N-channel Trench MOSFET 13 February 2025 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic packag.

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Datasheet Specifications

Part number: PMPB06R3XN
Manufacturer: nexperia ↗
File Size: 328.72 KB
Datasheet: PMPB06R3XN-nexperia.pdf
Description: 30V N-channel Trench MOSFET

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm

Applications

* Battery management
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon

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30V N-channel Trench MOSFET nexperia

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