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PMT280ENEA N-channel MOSFET

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Description

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MO.

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Features

* Logic level compatible
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* LED backlight driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sourc

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