* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads 1.3 Applic
PSMN2R9-25YLC Datasheet (917.44 KB)
PSMN2R9-25YLC
917.44 KB
N-channel mosfet.
PSMN2R9-25YLC
N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 1
* 2 May 2011
Product data sheet
1. Prod.
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