PSMN3R5-40YSD Datasheet - nexperia

PSMN3R5-40YSD, N-channel MOSFET

PSMN3R5-40YSD N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product da.
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

Features

* 120 A capability
* Avalanche rated, 100% tested at I(AS) = 120 A
* NextPower-S3 technology delivers 'superfast switching with soft recovery'
* Low QRR, QG and QGD for high system efficiency and low EMI designs
* Schottky-Plus body-diode, gives soft switching

PSMN3R5-40YSD-nexperia.pdf