PSMN3R5-40YSD - N-channel MOSFET

nexperia

Datasheet Details

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

120 A capability.
Avalanche rated, 100% tested at I(AS) = 120 A.
NextPower-S3 technology delivers 'superfast switching with soft recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Low VSD Schottky-like body-diode.
Tighter VGS(th) limits for improved paralleling.
Wide Safe Operating Area (SOA) for reliable lin.

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Published: Jul 28, 2019 |