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PSMN4R1-30YLC N-channel MOSFET

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Description

PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1.General descrip.
Logic level enhancement mode N-channel MOSFET in LFPAK package.

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Features

* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applicati

Applications

* DC-to-DC converters
* Load switching
* Power OR-ing
* Server power supplies
* Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current Tmb = 25 °C;

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