* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applicati
PSMN4R1-30YLC Datasheet (737.13 KB)
PSMN4R1-30YLC
737.13 KB
N-channel mosfet.
PSMN4R1-30YLC
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using
NextPower technology
12 February 2013
Product data sheet
1. General descrip.
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