NTC020N120SC1 SiC MOSFET

onsemi

Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 20 mohm, 1200 V, M1, Die NTC020N120SC1 .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

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Datasheet Specifications

Part number: NTC020N120SC1
Manufacturer: onsemi
File Size: 167.62 KB
Datasheet: NTC020N120SC1-onsemi.pdf
Description: SiC MOSFET

Features

* 1200 V @ TJ = 175°C
* Typ RDS(on) = 20 mW at VGS = 20 V, ID = 60 A
* High Speed Switching with Low Capacitance
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on second level interconnection) Applicat

Applications

* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger DIE DATA SHEET www. onsemi. com V(BR)DSS 1200 V RDS(on) MAX 28 mW @ 20 V ID MAX 103 A N
* CHANNEL MOSFET D G S DIE DIAGRAM G S1 S2 S3 Die Information S Wafer Diameter S Die Size S Metallization

NTC020N120SC1 Distributors

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NTC020N120SC1 SiC MOSFET onsemi

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