UJ4N075005K4S - SiC JFET

Description

Gen 4 Normally-On SiC JFET Transistor.

Features

Single Digit On-Resistance.
Operating Temperature: 175 C (Max).
High Pulse Current Capability.
Excellent Device Robustness.
Silver-Sintered Die Attach for Excellent Thermal Resistance.
Low Intrinsic Capacitance.
Short Circuit Rated.
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

onsemi

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Datasheet Details

Part number	UJ4N075005K4S
Manufacturer	onsemi
File Size	348.82 KB
Description	SiC JFET
Datasheet	UJ4N075005K4S Datasheet
Additional preview pages of the UJ4N075005K4S datasheet.

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Full PDF Text Transcription

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 750 V, 4.8 mohm UJ4N075005K4S Description onsemi’s UJ4N075005K4S is a 750 V, 4.8 mW High-Performance Gen 4 Normally-On SiC JFET Transistor. This device exhibits Ultra-low On resistance (RDS(ON)) in a TO247-4L Package, making it an ideal fit to address the Challenging Thermal Constraints of Solid-state Circuit Breakers and Relay Applications. Additionally, the JFET is a Robust Device Technology Capable of the High-Energy Switching Required in Circuit Protection Applications.

Published: Apr 26, 2025 |