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RG2006LN - Low VF / High-Speed Switching Diode
(Sanyo)
Ordering number : ENA1434
RG2006LN
SANYO Semiconductors
DATA SHEET
RG2006LN
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
F.
RG20x - (RG2xx) Digital Circuits
(Raytheon)
..
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RG2 - Silicon Diode
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1 Scope The present specifications shall apply to an RG2.
2 Outline
Type Silicon Diode
Structure
Resin Molded
Applicatio.
RG2 - ULTRA FAST RECOVERY RECTIFIER DIODES
(EIC discrete Semiconductors)
RG2 - RG2Z
PRV : 200 - 400 Volts Io : 1.2 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low re.
RG2 - High Efficiency Rectifiers
(LGE)
RG2Y-RG2A
High Efficiency Rectifiers
VOLTAGE RANGE: 70 --- 600 V CURRENT: 1.5 --- 1.0 A
Features
Low cost Diffused junction Low leakage Low forward .
RG2 - (RG2x) HIGH EFFICIENCY RECTIFIER
(BL)
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily.
RG2 - Silicon And Fast Recovery Rectifiers
(WEJ)
RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified .
RG211 - (RG2xx) Digital Circuits
(Raytheon)
..
.
RG21x - (RG2xx) Digital Circuits
(Raytheon)
..
.
RG22x - (RG2xx) Digital Circuits
(Raytheon)
..
.