Datasheet4U Logo Datasheet4U.com
6 views

CI04S65E3 Datasheet - tokmas

SiC Schottky Barrier Diode

CI04S65E3 Features

* 650-Volt Schottky Rectifier

* Optimized for PFC Boost Diode Application

* Zero Reverse Recovery Current

* Zero Forward Recovery Voltage

* High-Frequency Operation

* Temperature-Independent Switching Behavior

* Extremely Fast Switching

CI04S65E3 Datasheet (632.21 KB)

Preview of CI04S65E3 PDF

Datasheet Details

Part number:

CI04S65E3

Manufacturer:

tokmas

File Size:

632.21 KB

Description:

Sic schottky barrier diode.

📁 Related Datasheet

CI02S120E3 SiC Schottky Barrier Diode (tokmas)

CI-B1005-10NSJT CHIP CERAMIC INDUCTORS (Ceratech)

CI-B1005-xxxxJx CHIP CERAMIC INDUCTORS (Ceratech)

CI-B1608-xxxxJx CHIP CERAMIC INDUCTORS (Ceratech)

CI-B2012-xxxxJx CHIP CERAMIC INDUCTORS (Ceratech)

CI15T60 15A 600V Field Stop Trench IGBT (CITC)

CI160808 Multi-Layer Chip Inductors (BOURNS)

CI19N120SM SIC MOSFET (tokmas)

CI201210 Multi-Layer Chip Inductors (Bourns Electronic)

CI20T120P 20A 1200V Field Stop Trench IGBT (CITC)

TAGS

CI04S65E3 SiC Schottky Barrier Diode tokmas

Image Gallery

CI04S65E3 Datasheet Preview Page 2 CI04S65E3 Datasheet Preview Page 3

CI04S65E3 Distributor