QN0103M3N - N-Channel 100V Fast Switching MOSFET

uPI Semiconductor

QN0103M3N Datasheet Preview — Preview of QN0103M3N PDF

Datasheet Details

Part number	QN0103M3N
Manufacturer	uPI Semiconductor
File Size	2.68 MB
Description	N-Channel 100V Fast Switching MOSFET
Datasheet	QN0103M3N-uPISemiconductor.pdf

QN0103M3N Product details

Description

The QN0103M3N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

Features

Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available VDS 100V RDS(ON) max (VGS=10V) 16.6mΩ ID (TC=25 °C) 43A.

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Published: Jul 30, 2025 |