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A6SHB N-Channel Enhancement Mode Power MOSFET

A6SHB Description

WTM2306 N-Channel Enhancement Mode Power MOSFET .
The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other sw.

A6SHB Features

* V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
A6SHB
Manufacturer
wpmtek
File Size
797.32 KB
Datasheet
A6SHB-wpmtek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET wpmtek
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