AAT AAT7103
The AAT7103 25V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family.| Part No. | AAT7103 |
|---|---|
| Datasheet | AAT7103 Download |
| Manufacturer |  AAT |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Using the ultra-high density proprietary TrenchDMOS technology, the product demonstrates high power handling and small size. AAT7103FEATURES
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● VDS(MAX) = 25V ID(MAX)(1) = 6.8 A @ 25°C Low RDS(ON):
● 26 mΩ @VGS = 4.5V
● 41 mΩ @VGS = 2.5V
APPLICATIONS
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● Battery Packs Cellular & Cordless Telephones PDAs, Camcorders, and Cell Phones Dual SOP-8 Package Preliminary Information Top View D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value 25 ±12 ±6.8 ±5.4 ±24 1.8 2.0 1.25 -55 to 150DESCRIPTION
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range A W °C Thermal Characteristics Symbol RθJA RθJA2 RθJFDESCRIPTION
Typical Junction-to-Ambient steady state, one FET on Maximum Junction-to-Ambient Figure, t < 10 sec.
