AAT AAT7157
The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs.| Part No. | AAT7157 |
|---|---|
| Datasheet | AAT7157 Download |
| Manufacturer |  AAT |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AAT7157FEATURES
●●
● VDS(MAX) = -20V ID(MAX) 1 = -5.8A @ 25°C Low RDS(ON):
● 36 mΩ @ VGS = -4.5V
● 62 mΩ @ VGS = -2.5V Dual SOP-8L Package
APPLICATIONS
●● Battery Packs Battery-powered portable equipment D1 8 Top View D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value -20 ±12 ±5.8 ±4.6 ±24 -1.5 2.0 1.25 -55 to 150DESCRIPTION
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25°C TA = 70°C W °C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RθJA RθJA2 RθJFDESCRIPTION
Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<10 seconds Typical Junction-to-Foot 1 1 1 Value 100 62.5 35 Units °C/W 7157.2004.04.1.0 1 20V P-Channel Power MOSFETELECTRICAL CHARACTERISTICS
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