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AAT7551 Datasheet PDF

AAT AAT7551

The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets.
Part No. AAT7551
Datasheet AAT7551 Download
Manufacturer
AAT
Description P-Channel Power MOSFET
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AAT7551 datasheet page 1 preview

GENERAL DESCRIPTION

Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.

FEATURES

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● Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -2.7A @ 25°C Low On-Resistance: — 100mΩ @ VGS = -4.5V — 175mΩ @ VGS = -2.5V Dual SC70JW-8 Package Top View D1 8 D1 7 D2 6 D2 5

APPLICATIONS

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● Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S1 2 G1 3 S2 4 G2

DESCRIPTION

Drain-Source Voltage Gate-Source Voltage Value -20 ±12 ±2.7 ±2.2 ±8 -0.6 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A °C °C Thermal Chara...
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