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AAT8343 - P-Channel Power MOSFET

Description

The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets.

Using AnalogicTech's ultra-high-density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size.

Features

  • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25°C Low On-Resistance:.
  • 60mΩ @ VGS = -4.5V.
  • 110mΩ @ VGS = -2.5V.

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Datasheet Details

Part number AAT8343
Manufacturer AAT
File Size 150.51 KB
Description P-Channel Power MOSFET
Datasheet download datasheet AAT8343 Datasheet
Additional preview pages of the AAT8343 datasheet.

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Full PDF Text Transcription

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AAT8343 20V P-Channel Power MOSFET General Description The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25°C Low On-Resistance: — 60mΩ @ VGS = -4.5V — 110mΩ @ VGS = -2.5V Applications • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones TSOP-6 Package Top View D 6 D 5 S 4 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 D 2 D 3 G Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±4.5 ±3.
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