ABB 5SDD38H5000
Rectifier Diode
VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.136 V A A A V mΩ Rectifier Diode 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06
● Optimum power handling capability
● Very low on-state losses Blocking Maximum rated values Note 1 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 50 Hz, tp = 10ms, Tj = -40...160°C min typ Value 5000 5000 max 110 Unit V V Unit mA Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160°C Derating factor of 0.13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated values Note 1 Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 50 kN, Ta = 2...
● Optimum power handling capability
● Very low on-state losses Blocking Maximum rated values Note 1 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 50 Hz, tp = 10ms, Tj = -40...160°C min typ Value 5000 5000 max 110 Unit V V Unit mA Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160°C Derating factor of 0.13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated values Note 1 Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 50 kN, Ta = 2...