ABB 5SDD71B0200
Rectifier Diode
VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 mΩ Rectifier Diode 5SDD 71B0200 Doc. No. 5SYA1132-02 July 06
● Optimized for high current rectifiers
● Very low on-state voltage
● Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM Mounting force min. max. a Acceleration: Device unclamped Device clamped m Weight DS Surface creepage distance Da Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.14 kg 4 mm 4 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 71B0200 On-state IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge curre...
● Optimized for high current rectifiers
● Very low on-state voltage
● Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM Mounting force min. max. a Acceleration: Device unclamped Device clamped m Weight DS Surface creepage distance Da Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.14 kg 4 mm 4 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 71B0200 On-state IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge curre...