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5SHY35L4512 Datasheet PDF

ABB 5SHY35L4512

Asymmetric Integrated Gate- Commutated Thyristor

Part No. 5SHY35L4512
Datasheet 5SHY35L4512 Download
Manufacturer
ABB
Description Asymmetric Integrated Gate- Commutated Thyristor
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5SHY35L4512 datasheet page 1 preview
VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 35×103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07
● Lowest on state voltage (2V @ 4000A)
● Optimized for low frequency (<100 Hz) and wide temperature range
● High reliability
● High electromagnetic immunity
● Simple control interface with status feedback
● AC or DC supply voltage
● Contact factory for series connection Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage Characteristic values min typ max 4500 2800 17 10 Unit V V V V Unit mA Ambient cosmic radiation at sea level in open air. Gate Unit energized IGCT in off-state on-state VRRM Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized min typ max 50 Mechanical data (see Fig. 11, 12) 1) Maximum rated values Parameter Mounting...
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