5SMX12N4507 Overview
VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 5SYA1626-03 July 06 Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature.