ABB 5SNA1200E330100
IGBT Module
VCE = IC = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100
● Low-loss, rugged SPT chip-set
● Smooth switching SPT chip-set for good EMC
● Industry standard package
● High power density
● AlSiC base-plate for high power cycling capability
● AlN substrate for low thermal resistance Doc. No. 5SYA1556-03 May 05 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 2500 V, VCEMCHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -40 Mounting torques 2) Ms Base-heatsink, M6...
● Low-loss, rugged SPT chip-set
● Smooth switching SPT chip-set for good EMC
● Industry standard package
● High power density
● AlSiC base-plate for high power cycling capability
● AlN substrate for low thermal resistance Doc. No. 5SYA1556-03 May 05 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 2500 V, VCEMCHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -40 Mounting torques 2) Ms Base-heatsink, M6...