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5SNE0800M170100 Datasheet PDF

ABB 5SNE0800M170100

IGBT Module

Part No. 5SNE0800M170100
Datasheet 5SNE0800M170100 Download
Manufacturer
ABB
Description IGBT Module
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5SNE0800M170100 datasheet page 1 preview
VCE = IC = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100
● Low-loss, rugged SPT chip-set
● Smooth switching SPT chip-set for good EMC
● Industry standard package
● High power density
● AlSiC base-plate for high power cycling capability
● AlN substrate for low thermal resistance Doc. No. 5SYA1590-00 Oct 06 Maximum rated values 1) Parameter Symbol Conditions min Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -40 Mounting torques 2) Ms Base-heatsink,...
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