5STB13N6500 Description
5SYA1035-03 May 06 Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Maximum rated values Note 1 Parameter Max. surge peak blocking voltage Max.