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VSM IT(AV)M IT(RMS) ITSM VT0 rT
= 6500 V = 1405 A = 2205 A = 22×103 A = 1.2 V = 0.6 mΩ
Bi-Directional Control Thyristor
5STB 13N6500
Doc. No. 5SYA1035-03 May 06
• • • • •
Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values
Note 1
Parameter Max. surge peak blocking voltage Max.
5STB13N6500 Datasheet
