5STP07D1800 Datasheet | ABB

VDSM ITAVM ITRMS ITSM VT0 r T - - - = = = = = = 1800 V 730 A 1150 A 9000 A 0.80 V 0.540 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability .. - Designed Blocking Part Number VDRM VRSM1 IDRM IRRM d V/dtcrit VRRM 5STP 07D1800 5STP 07D1600 5STP 07D1200 Conditions 1800 V 2000 V 1600 V 1800 V ≤ 100 m A ≤ 100 m A 1000 V/µs 1200 V 1400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.3 kg 25 mm 14 mm 10 k N 8 k N 12 k N ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 07D1800 On-state ITAVM ITRMS ITSM It Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 730 A 1150 A 9000 A 9500 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1500 A 500 - 1500 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 405 k A s tp = 374 k A s tp = VT VT0 .. On-state voltage Threshold voltage Slope resistance Holding current 1.60 V 0.80 V 0.540 mΩ 20-70 m A 10-50 m A IT = IT = r T IH IL Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 80-500 m A 50-200 m A Switching di/dtcrit Critical rate of rise of on-state current 150 A/µs 300 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 1500 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 400 µs VD ≤ 0.67⋅VDRM ITRM = 1500 A, Tj = 125°C dv D/dt = 20V/µs VR > 200 V, di T/dt = -20...