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VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
5200 V 3600 A 5650 A 55000 A 1.03 V 0.16 mΩ
Phase Control Thyristor
5STP 34N5200
Doc. No. 5SYA1002-03 Jan. 02
• • • •
Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
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Blocking
Maximum rated values
1)
Symbol VDSM, VRSM VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.