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VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 mΩ
Phase Control Thyristor
5STP 38N4200
Doc. No. 5SYA1012-03 Jan. 02
• • • •
Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
• Designed www.DataSheet4U.com
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.