5STP38N4200 Description
VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 mΩ Phase Control Thyristor 5STP 38N4200 Doc. 02 Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Designed .. Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions...