5STP45N2200
5STP45N2200 is Phase Control Thyristor manufactured by ABB.
- Part of the 5STP45N2800 comparator family.
- Part of the 5STP45N2800 comparator family.
VDSM ITAVM ITRMS ITSM VT0 r T
= = = = = =
2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ
Phase Control Thyristor
5STP 45N2800
Doc. No. 5SYA1007-03 Jan. 02
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Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
- Designed ..
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM VRSM1 d V/dtcrit Parameter
Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C
5STP 45N2800 5STP 45N2600 5STP 45N2200 2800 V 3000 V 2600 V 2800 V 1000 V/µs min typ max 400 400 Unit m A m A 2200 V 2400 V
Characteristic values
Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C
Forwarde leakage current Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100
Unit k N m/s m/s Unit kg mm mm
2 2
Parameter Weight Surface creepage distance Air strike distance
Symbol Conditions m DS Da min 56 22 typ 2.9 max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 45N2800
On-state
Maximum rated values
1)
Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values w w w . D a t Parameter a S h e e t 4 U . c o m
Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V Half sine wave, Tc = 70°C min typ max 5080 7970 75000 28125 79000 25900
Unit A A A k A2s A k A2s Unit V V mΩ m A m A m A m...
